A 5V ±5% product will be identified as AB, and the 3.3V product will be identified as W. Depending upon the specific part number, a 5V ☑0% product will be identified as Y or AD. The alphabetic character(s) preceding the hyphen in an NV SRAM part number represents the power-supply tolerance, or operating voltage range, for the component. What Do the Y, W, AD, and AB Characters Mean in the Part Numbers (e.g., DS1225Y, DS1230W, DS1245AB)? Use the same part number indicated on the original product or system bill-of-materials (BOM). Selection of an improper part number can result in a system malfunction.

The numeric characters following the DS in a part number designate the memory density and I/O configuration. Deciphering the Performance Capabilities Identified in an NV SRAM Part Number What Does the 1220, 1225, 1230 etc. As a fortunate by-product of the improved memory-chip performance, the newer and faster components will still function properly in older/slower applications.

Meanwhile, the performance requirement(s) of the original system probably did not change without a reengineering effort. As time passed, the performance of those same memory components improved dramatically through IC design and process enhancements. Historically, memory components were procured to meet performance requirements when a system was originally designed and manufactured. Evolving Memory Technology and Existing Designs Analog Devices remains committed to providing suitable replacement components as memory densities and technologies evolve. This article addresses many of those questions. Many customers have questions about the general guidelines for substituting memory components in an existing design.

Depending on the specific product selected, some customers may have to modify their future purchasing information. IntroductionĪs part of Analog Devices' continued support for legacy nonvolatile (NV) memory applications, the Company is simplifying several memory product offerings. This article explains basic guidelines for substituting a nonvolatile (NV) memory component in an existing design.

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